Description of Individual Course Units
Course Unit CodeCourse Unit TitleType of Course UnitYear of StudySemesterNumber of ECTS Credits
9101045401998Physics of Semiconductors IIElective128
Level of Course Unit
Second Cycle
Objectives of the Course
Physics of semiconductors II is aimed at graduate students of physics and engineering for a fundamental course on semiconductor devices.
Name of Lecturer(s)
Assist.Prof.Dr.Teoman YILDIZ
Learning Outcomes
1To be able to learn the applications of semiconductor devices in daily life.
2To be able to understand the properties of the new devices which are improved by technological developments.
3To be able to understand the basic principles of semiconductor devices.
4To be able to make and apply a semiconductor circuit design.
5To be able to review of literature, to be able to present and to be able to evaluate the results.
6To be able to apply modern techniques and methods and to use modern tools which are neccessary for electronic circuit applications.
7To be able to identify and analysis and evaluate of semiconductor electronic circuits.
8To be able to apply the information of mathematics, science and engineering to the analysis of semiconductor device problems.
9To be able to understand crystal properties and growth of semiconductors.
10To be able to present the physical properties of semiconductor devices.
Mode of Delivery
Face to Face
Prerequisites and co-requisities
None
Recommended Optional Programme Components
None
Course Contents
This course includes in detail transistors and also provides an introduction to optoelectronic devices, power devices, microwave devices, and integrated circuits.
Weekly Detailed Course Contents
WeekTheoreticalPracticeLaboratory
1Fundamentals of bipolar junction transistors(BJT): Charge transport in BJT, Amplification with BJTs.
2Minority carrier distributions and terminal currents in BJT.
3Generalized biasing in BJT.
4Switching and other important effects in BJT.Problem Solving
5Field effect transisitors: The junction FET
6Fabrication and operation of JFET, Pinch-off and saturation, Gate control, Current-voltage characteristics.Problem Solving
7The metal-semiconductor FET: Fabrication and operation of MESFET.
8Midterm
9The metal-insulator-semiconductor FET: Fabrication and operation of MOSFETProblem Solving
10Capacitance effects in MOSFET.
11Integrated circuits: Advantages of integration, Types of integrated circuits.Problem Solving
12Fabrication of monolithic integrated circuits.
13Monolithic device elements.Problem Solving
14Semiconductor lasers.
15Models of operation in resonant circuits.Problem Solving
16Final exam
Recommended or Required Reading
Course Book: 1-Solid State Electronic Devices, Ben G. Streetman, , Fourth Edt., Prentice Hall, 1995 Helper Books: 1- Introduction to Semiconductor Materials and Devices, M.S. Tyagi, Wiley, New York, 1991 2- Physical Foundations of Solid State and Electron Devices, A. M. Ferendeci, Mc Graw Hill, New York, 1991
Planned Learning Activities and Teaching Methods
Assessment Methods and Criteria
Term (or Year) Learning ActivitiesQuantityWeight
SUM0
End Of Term (or Year) Learning ActivitiesQuantityWeight
SUM0
SUM0
Language of Instruction
Turkish
Work Placement(s)
None
Workload Calculation
ActivitiesNumberTime (hours)Total Work Load (hours)
Midterm Examination122
Final Examination122
Makeup Examination000
Problem Solving6212
Discussion14228
Question-Answer14228
Report Preparation8756
Report Presentation8216
Individual Study for Homework Problems6424
Individual Study for Mid term Examination13030
Individual Study for Final Examination13030
TOTAL WORKLOAD (hours)228
Contribution of Learning Outcomes to Programme Outcomes
PO
1
PO
2
PO
3
PO
4
PO
5
PO
6
PO
7
PO
8
PO
9
PO
10
PO
11
LO1  4  5     
LO24          
LO3 4         
LO4  4        
LO5 54        
LO6  4 4  54  
LO74          
LO85          
LO94          
LO104          
* Contribution Level : 1 Very low 2 Low 3 Medium 4 High 5 Very High
 
Ege University, Bornova - İzmir / TURKEY • Phone: +90 232 311 10 10 • e-mail: intrec@mail.ege.edu.tr